Nb-doped Ga2O3 as charge-trapping layer for nonvolatile memory applications

被引：8
|
作者：
Shi, R. P. [1 ]
Huang, X. D. [2 ]
Sin, Johnny K. O. [3 ]
Lai, P. T. [1 ]
机构：
[1] Univ Hong Kong, Dept Elect & Elect Engn, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China
[2] Southeast Univ, Key Lab MEMS, Minist Educ, Nanjing 210096, Jiangsu, Peoples R China
[3] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China
来源：
MICROELECTRONICS RELIABILITY | 2016年 / 65卷
关键词：
Nonvolatile memory; Charge trapping; High-k dielectric; Nb-doped Ga2O3;
D O I：
10.1016/j.microrel.2016.07.148
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The charge-trapping properties of Nb-doped Ga2O3 are investigated by using an Al/Al2O3/GaNbO/SiO2/Si structure. Compared with the memory capacitor with pure Ga2O3, the one with lightly Nb-doped Ga2O3 shows better charge-trapping characteristics, including larger memory window (5.5 V at +/-6 V sweeping voltage), higher programming and erasing speeds due to its higher trapping efficiency resulted from increased trap density induced by the Nb doping. The sample with heavily Nb-doped Ga2O3 also shows improvements compared with the one with pure Ga2O3, but not as large as those for the lightly Nb-doped sample due to defects generated by excessive Nb doping. Erase saturation phenomenon is observed in all the samples, and can be suppressed by hole traps created by the Nb doping. (C) 2016 Published by Elseitier Ltd.
引用
收藏
页码：64 / 68
页数：5
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