Dielectric films fabricated in plasma as passivation of 4H-SiC Schottky diodes

被引：9
|
作者：
Sochacki, M [1 ]
Szmidt, J [1 ]
机构：
[1] Warsaw Univ Technol, Inst Microelect & Optoelect, PL-00662 Warsaw, Poland
来源：
THIN SOLID FILMS | 2004年 / 446卷 / 01期
关键词：
silicon carbide; Schottky barrier; aluminium oxide; aluminium nitride;
D O I：
10.1016/S0040-6090(03)01202-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this report, we propose Al2O3, and AlN films as passivation for high-voltage SiC Schottky barrier diodes. A reactive pulse plasma enhanced chemical vapour deposition method is used to form the layers. The comparison between the Schottky barrier diodes with and without passivation shows the effectiveness of Al2O3 layer on the reverse current decrease as a result of the surface states reduction. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：106 / 110
页数：5
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