Effect of surface passivation on breakdown voltages of 4H-SiC Schottky barrier diodes

被引：0
|
作者：
In Ho Kang
Moon Kyong Na
Ogyun Seok
Jeong Hyun Moon
H. W. Kim
Sang Cheol Kim
Wook Bahng
Nam Kyun Kim
Him-Chan Park
Chang Heon Yang
机构：
[1] Korea Electrotechnology Research Institute (KERI),Power Semiconductor Research Center
[2] Kyungnam University,Department of Electrical Engineering
[3] Maple Semiconductors. Inc.,R&D team
来源：
Journal of the Korean Physical Society | 2017年 / 71卷
关键词：
4H-SiC; Schottky barrier diode; Passivation; Breakdown voltage;
D O I：
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中图分类号：
学科分类号：
摘要：
In this paper, the effect of surface passivation on the breakdown voltage of 4H-SiC Schottky barrier diode (SBD) was investigated. The SBDs having various passivation structures were fabricated. The passivation layers consist of 2 different ones: (1) thermal oxide with a post oxidation annealing, or no oxide by removing the oxide, and (2) plasma-enhanced chemical vapor deposited (PECVD) oxide, phosphosilicate glass (PSG), or polyimide (PI). The results show that the SBD having a sacrificial oxide as 1st passivation layer and a PI as 2nd passivation layer exhibited lower leakage current by a factor of more than 2 for the reverse bias above 1000 V than the others and its breakdown voltage (VBR) was 2254 V, which corresponds to 93% VBR of a parallel-plane ideal device.
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页码：707 / 710
页数：3
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