Effect of hydrogenation on the optical and structural properties of GaAs thin films prepared by rf-magnetron sputtering

被引：14

作者：

Azevedo, GD

da Silva, JHD

Avendaño, E

机构：

[1] Lab Nacl Luz Sincrotron, BR-13084971 Campinas, SP, Brazil

[2] UNESP, Fac Ciencias, BR-17033360 Bauru, SP, Brazil

[3] Univ Costa Rica, Ctr Ciencia & Ingn Mat, San Jose 2060, Costa Rica

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2005年 / 238卷 / 1-4期

关键词：

EXAFS; gallium arsenide; GaAs; sputtering; hydrogenation;

D O I：

10.1016/j.nimb.2005.06.071

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have utilized infra-red and optical absorption measurements, grazing incidence X-ray diffraction (GIXRD) and extended X-ray absorption fine structure (EXAFS) measurements to investigate the influence of hydrogenation on the optical and structural properties of GaAs thin films prepared by rf-magnetron sputtering. Hydrogenation induces distinct changes in the optical properties, namely shifts in the absorption edges and reduction of the Urbach energy. Such modifications are correlated to a reduction in structural disorder as determined by EXAFS and the increase of crystallinity determined by GIXRD. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：329 / 333

页数：5

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