Effect of hydrogenation on the optical and structural properties of GaAs thin films prepared by rf-magnetron sputtering

被引：14
|
作者：
Azevedo, GD
da Silva, JHD
Avendaño, E
机构：
[1] Lab Nacl Luz Sincrotron, BR-13084971 Campinas, SP, Brazil
[2] UNESP, Fac Ciencias, BR-17033360 Bauru, SP, Brazil
[3] Univ Costa Rica, Ctr Ciencia & Ingn Mat, San Jose 2060, Costa Rica
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2005年 / 238卷 / 1-4期
关键词：
EXAFS; gallium arsenide; GaAs; sputtering; hydrogenation;
D O I：
10.1016/j.nimb.2005.06.071
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We have utilized infra-red and optical absorption measurements, grazing incidence X-ray diffraction (GIXRD) and extended X-ray absorption fine structure (EXAFS) measurements to investigate the influence of hydrogenation on the optical and structural properties of GaAs thin films prepared by rf-magnetron sputtering. Hydrogenation induces distinct changes in the optical properties, namely shifts in the absorption edges and reduction of the Urbach energy. Such modifications are correlated to a reduction in structural disorder as determined by EXAFS and the increase of crystallinity determined by GIXRD. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：329 / 333
页数：5
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