Transmission electron microscopy characterization of HfO2/GaAs(001) heterostructures grown by molecular beam epitaxy

被引：8
|
作者：
Liou, S. C. [1 ]
Chu, M. -W. [1 ]
Chen, C. H. [1 ]
Lee, Y. J. [2 ]
Chang, P. [2 ]
Lee, W. C. [2 ]
Hong, M. [2 ]
Kwo, J. [3 ]
机构：
[1] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 106, Taiwan
[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan
[3] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2008年 / 91卷 / 04期
关键词：
D O I：
10.1007/s00339-008-4493-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Transmission electron microscopy structural characterization of HfO2/GaAs(001) heterostructures grown by molecular beam epitaxy with a film thickness of similar to 5 nm was conducted. The study indicates that the room-temperature as-grown films are amorphous and the films crystallize into the monoclinic phase upon in situ post annealing at 540 degrees C in the growth chamber. Both types of films show an atomically sharp interface with GaAs(001) substrates. The crystalline monoclinic HfO2 films exhibit c-oriented epitaxy on the substrate and consist of 90 degrees domains. The formation of 90 degrees domains in the heterostructures, the details of the domain-wall configurations, and the possible impact of the walls and the frequently observed anti-phase boundaries in the films on electrical properties of the heterostructures are discussed.
引用
收藏
页码：585 / 589
页数：5
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