Structure of HfO2 films epitaxially grown on GaAs(001)

被引：26
|
作者：
Hsu, C. -H.
Chang, P.
Lee, W. C.
Yang, Z. K.
Lee, Y. J.
Hong, M.
Kwo, J. [1 ]
Huang, C. M.
Lee, H. Y.
机构：
[1] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan
[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan
[3] Natl Synchrotron Radiat Res Ctr, Div Res, Hsinchu 30076, Taiwan
[4] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 12期
关键词：
D O I：
10.1063/1.2356895
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High-quality HfO2 films of technologically important thickness ranging from 1.8 to 17 nm have been grown epitaxially on GaAs (001) by molecular beam epitaxy. Thorough structural and morphological investigations were carried out by x-ray scattering and high-resolution transmission electron microscopy. The films exhibit an atomically sharp interface with the substrate and are of a monoclinic phase with predominant (001)-plane epitaxy between the HfO2 films and GaAs, in spite of a large lattice mismatch of > 8.5%.
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页数：3
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