Transmission electron microscopy investigation of InNAs on GaAs grown by molecular beam epitaxy

被引：8
|
作者：
Hao, M
Sakai, S
Sugahara, T
Cheng, TS
Foxon, CT
机构：
[1] Univ Tokushima, Dept Elect & Elect Engn, Tokushima 770, Japan
[2] Univ Nottingham, Dept Phys, Nottingham NG7 2RD, England
来源：
JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷
关键词：
InNAs films; phases separation; XRD; TEM; EDX;
D O I：
10.1016/S0022-0248(98)00335-2
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The InNAs films have been grown on GaAs substrates by molecular beam epitaxy using an RF-activated plasma N source. The properties of these films have been investigated by X-ray diffraction, transmission electron microscopy and energy dispersive X-ray spectroscopy mapping. Two phases, InNAs and InAs, were found in the InNAs films. The InNAs phase consists of pyramid-like islands connected to each other at the base and that most of the InAs grains grew between these InNAs islands in the shape of an inverse pyramid. Both InNAs and InAs are cubic and have the same crystallographic direction as the substrates. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：481 / 484
页数：4
相关论文
共 50 条
  • [1] A TRANSMISSION ELECTRON-MICROSCOPY INVESTIGATION OF GAAS1-YSBY-GAAS SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY
    HAQ, S
    HOBSON, G
    SINGER, KE
    TRUSCOTT, WS
    WILLIAMS, JO
    [J]. INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (100): : 337 - 341
  • [2] A TRANSMISSION ELECTRON-MICROSCOPY INVESTIGATION OF GAAS1-YSBY-GAAS SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY
    HAQ, S
    HOBSON, G
    SINGER, KE
    TRUSCOTT, WS
    WILLIAMS, JO
    [J]. MICROSCOPY OF SEMICONDUCTING MATERIALS 1989, 1989, 100 : 337 - 341
  • [3] Transmission electron microscopy studies of GaAs nanostructures in InGaAs/InP matrix grown by molecular beam epitaxy
    Lin, S. D.
    Lin, Z. C.
    Lee, C. P.
    [J]. JOURNAL OF APPLIED PHYSICS, 2006, 100 (05)
  • [4] Study by transmission electron microscopy of GaInSb layers grown on (001)GaAs substrates by molecular beam epitaxy
    Aragon, G
    deCastro, MJ
    PerezCamacho, JJ
    Briones, F
    Garcia, R
    [J]. MICROSCOPY OF SEMICONDUCTING MATERIALS 1995, 1995, 146 : 263 - 266
  • [5] TRANSMISSION ELECTRON-MICROSCOPY OF (001)ZNTE ON (001)GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    PETRUZZELLO, J
    OLEGO, DJ
    CHU, X
    FAURIE, JP
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (05) : 1783 - 1785
  • [6] Transmission electron microscopy characterization of HfO2/GaAs(001) heterostructures grown by molecular beam epitaxy
    Liou, S. C.
    Chu, M. -W.
    Chen, C. H.
    Lee, Y. J.
    Chang, P.
    Lee, W. C.
    Hong, M.
    Kwo, J.
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2008, 91 (04): : 585 - 589
  • [7] TRANSMISSION ELECTRON-MICROSCOPY STUDY OF CDTE(111) GROWN ON GAAS(100) BY MOLECULAR-BEAM EPITAXY
    RENO, JL
    CARR, MJ
    GOURLEY, PL
    [J]. JOURNAL OF APPLIED PHYSICS, 1990, 67 (09) : 4114 - 4117
  • [8] Transmission electron microscopy characterization of HfO2/GaAs(001) heterostructures grown by molecular beam epitaxy
    S.C. Liou
    M.-W. Chu
    C.H. Chen
    Y.J. Lee
    P. Chang
    W.C. Lee
    M. Hong
    J. Kwo
    [J]. Applied Physics A, 2008, 91 : 585 - 589
  • [9] Transmission electron microscopy of GaN columnar nanostructures grown by molecular beam epitaxy
    Mamutin, VV
    Cherkashin, NA
    Vekshin, VA
    Zhmerik, VN
    Ivanov, SV
    [J]. PHYSICS OF THE SOLID STATE, 2001, 43 (01) : 151 - 156
  • [10] Transmission electron microscopy of GaN columnar nanostructures grown by molecular beam epitaxy
    V. V. Mamutin
    N. A. Cherkashin
    V. A. Vekshin
    V. N. Zhmerik
    S. V. Ivanov
    [J]. Physics of the Solid State, 2001, 43 : 151 - 156
12345