A simple method for effective channel length, series resistance and mobility extraction in deep-submicron'MOSFETs

被引：0
|
作者：
Yu, CL [1 ]
Hao, Y [1 ]
Yang, LA [1 ]
机构：
[1] Xidian Univ, Inst Microelect, Xian 710071, Peoples R China
来源：
2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS | 2004年
关键词：
parameter extraction; parasitic series resistance; effective channel length; effective mobility; lightly-doped-drain MOSFET;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new method which utilizes the linear regression at subsections of the pate bias range is proposed for parameters extraction in deep-submicron lightly doped drain (LDD) MOSFET's. It avoids the range optimization and retains the accuracy of the linear regression extraction. The extracted gate bias dependent parameters are implemented in the proposed I-V model for LDD MOSFET's. resulting good agreements between simulations and measurements.
引用
收藏
页码：958 / 961
页数：4
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