Additional resistance method for extraction of separated nonlinear parasitic resistances and effective mobility in MOSFETs

被引：7
|
作者：
Lim, GM [1 ]
Kim, YC [1 ]
Kim, DJ [1 ]
Park, YW [1 ]
Kim, DM [1 ]
机构：
[1] Kookmin Univ, Sch Elect Engn, Seoul 136702, South Korea
来源：
ELECTRONICS LETTERS | 2000年 / 36卷 / 14期
关键词：
D O I：
10.1049/el:20000810
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An additional resistance method (ARM) is proposed for the accurate and convenient extraction of separated source (R-S) and drain (R-D) resistances. which also include gate voltage (V-GS) dependence, in MOSFETs. The ARM uses an analytical current-voltage relation in the linear operation of MOSFETs with two external resistors. In addition to V-GS-dependent R-S and R-D, the channel carrier mobility is obtained by considering parasitic resistances in MOSFETs. The ARM is verified using experimental data obtained from n- and p-MOSFETs with W/L = 30 mu m/0.7 mu m.
引用
收藏
页码：1233 / 1234
页数：2
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