Nearly ideal InP/GaAsSb/InP double heterojunction bipolar transistors with ballistically launched collector electrons

被引：16
|
作者：
Matine, N
Dvorak, MW
Bolognesi, CR
Xu, X
Hu, J
Watkins, SP
Thewalt, MLW
机构：
[1] Simon Fraser Univ, Sch Engn Sci, Compound Semicond Device Lab, Burnaby, BC V5A 1S6, Canada
[2] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada
来源：
ELECTRONICS LETTERS | 1998年 / 34卷 / 17期
关键词：
D O I：
10.1049/el:19981160
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Near-ideal abrupt heterojunction InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) have been implemented. The GaAsSb conduction band edge is measured to be 0.18 eV higher than the InP conduction band edge, resulting in a ballistic electron launcher collector that is free of the blocking effect normally associated with GaInAs DHBTs. The collector and base current ideality factors were 1.00 and 1.05, respectively, and a very low collector offset voltage L-CE.OFF = 14 mV was measured for 5 x 12 mu m(2) self-aligned DHBTs.
引用
收藏
页码：1700 / 1702
页数：3
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