Nearly ideal InP/GaAsSb/InP double heterojunction bipolar transistors with ballistically launched collector electrons

被引：16
|
作者：
Matine, N
Dvorak, MW
Bolognesi, CR
Xu, X
Hu, J
Watkins, SP
Thewalt, MLW
机构：
[1] Simon Fraser Univ, Sch Engn Sci, Compound Semicond Device Lab, Burnaby, BC V5A 1S6, Canada
[2] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada
来源：
ELECTRONICS LETTERS | 1998年 / 34卷 / 17期
关键词：
D O I：
10.1049/el:19981160
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Near-ideal abrupt heterojunction InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) have been implemented. The GaAsSb conduction band edge is measured to be 0.18 eV higher than the InP conduction band edge, resulting in a ballistic electron launcher collector that is free of the blocking effect normally associated with GaInAs DHBTs. The collector and base current ideality factors were 1.00 and 1.05, respectively, and a very low collector offset voltage L-CE.OFF = 14 mV was measured for 5 x 12 mu m(2) self-aligned DHBTs.
引用
收藏
页码：1700 / 1702
页数：3
相关论文
共 50 条
  • [1] InP/GaAsSb/InP double heterojunction bipolar transistors
    Bolognesi, CR
    Dvorak, MW
    Watkins, SP
    IEEE LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS, 2002, : 343 - 351
  • [2] InP/GaAsSb/InP double heterojunction bipolar transistors (invited)
    Bolognesi, CR
    Dvorak, MW
    Watkins, SP
    GAAS IC SYMPOSIUM - 24TH ANNUAL, TECHNICAL DIGEST 2002, 2002, : 265 - 268
  • [3] InP/GaAsSb/InP heterojunction bipolar transistors
    Bolognesi, CR
    Dvorak, MW
    Watkins, SP
    COMPOUND SEMICONDUCTORS 2002, 2003, 174 : 203 - 209
  • [4] Design and performance of InP/GaAsSb/InP double heterojunction bipolar transistors
    Dvorak, MW
    Matine, N
    Bolognesi, CR
    Xu, XG
    Watkins, SP
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (02): : 761 - 764
  • [5] High performance InP/InAlAs/GaAsSb/InP double heterojunction bipolar transistors
    Cho, S. W.
    Yun, J. H.
    Jun, D. H.
    Song, J. I.
    Adesida, I.
    Pan, N.
    Jang, J. H.
    SOLID-STATE ELECTRONICS, 2006, 50 (06) : 902 - 907
  • [6] Surface recombination in InP/InAlAs/GaAsSb/InP double heterojunction bipolar transistors
    Ng, Chai Wah
    Wang, Hong
    Radhakrishnan, K.
    2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2007, : 151 - 153
  • [7] Current transport mechanism in InP/InAlAs/GaAsSb/InP double heterojunction bipolar transistors
    Wang, Hong
    Ng, Chai Wah
    Radhakrishnan, K.
    Ng, Geok Ing
    2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2007, : 147 - 150
  • [8] Molecular beam epitaxial growth and characterization of InP/GaAsSb/InP double heterojunction bipolar transistors
    Rajavel, RD
    Hussain, T
    Montes, MC
    Sawins, MW
    Thomas, S
    Chow, DH
    JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) : 848 - 851
  • [9] Temperature dependent study of InAlAs-InP/GaAsSb/InP double heterojunction bipolar transistors
    Wang, Che-ming
    Hsin, Yue-Ming
    APPLIED PHYSICS LETTERS, 2007, 90 (23)
  • [10] Performance prediction of InP/GaAsSb double heterojunction bipolar transistors for THz applications
    Wen, Xin
    Arabhavi, Akshay
    Quan, Wei
    Ostinelli, Olivier
    Mukherjee, Chhandak
    Deng, Marina
    Fregonese, Sebastien
    Zimmer, Thomas
    Maneux, Cristell
    Bolognesi, Colombo R.
    Luisier, Mathieu
    JOURNAL OF APPLIED PHYSICS, 2021, 130 (03)
12345