Meeting the challenges of elemental analysis in 90nm & beyond technologies - Case studies of scanning Auger nanoprobe

被引：0

作者：

Rao, Nistala Ramesh ^{[1
]}

Wang, Tan Chin ^{[1
]}

Song, Zhigang ^{[1
]}

Younan, Hua ^{[1
]}

Zhao, Siping ^{[1
]}

机构：

[1] Chartered Semicond Mfg Ltd, Woodlands Ind Pk D,St 2, Singapore 738406, Singapore

来源：

2006 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS | 2006年

关键词：

D O I：

10.1109/SMELEC.2006.380740

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper few case studies of Auger elemental analysis in failure analysis of wafer fabrication, using a state-of-the-art scanning Auger nanoprobe, will be presented. Material identification in particle defects is quite challenging especially in advanced microelectronic technologies, 90nm and beyond, where, due to decreasing device size, the tight pitch and high aspect ratio of features introduces constraints of analysis. Thus, the case studies discussed in the paper are all pertaining to the front-end related defects, at poly+contact region of the die, where these contraints are expected to be severe. It will be shown that the scanning Auger nanoprobe can be used for the elemental analysis of features as small as similar to 10nm.

引用

页码：768 / +

页数：2

共 13 条

[1] Circuit and platform design challenges in technologies beyond 90nm
Grundmann, B
Galivanche, R
Kundu, S
[J]. DESIGN, AUTOMATION AND TEST IN EUROPE CONFERENCE AND EXHIBITION, PROCEEDINGS, 2003, : 44 - 47
[2] Yield enhancement challenges for 90nm and beyond
Goel, H
Dance, D
[J]. ASCMC 2003: IEEE/SEMI (R) ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE AND WORKSHOP, PROCEEDINGS, 2003, : 262 - 265
[3] Challenges for ultra-shallow junction formation technologies beyond the 90nm node
Timans, PJ
Lerch, W
Niess, J
Paul, S
Acharya, N
Nenyei, Z
[J]. 11TH IEEE INTERNATIONAL CONFERENCE ON ADVANCED THERMAL PROCESSING OF SEMICONDUCTORS, 2003, : 17 - 33
[4] Post implant strip optimization for 90nm and beyond technologies
Fuller, Nicholas C. M.
Santiago, Anthony
Mello, Kevin
Yu, Chienfan
Molis, Steve
[J]. 2006 IEEE/SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE AND WORKSHOP, 2006, : 289 - +
[5] Meeting manufacturing metrology challenges at 90 nm and beyond
Bunday, Benjamin
Godwin, Milton
Lipscomb, Pete
Patel, Dilip
Bishop, Michael
Allgair, John
Diebold, Alain C.
[J]. MICRO, 2005, 23 (07): : 31 - 41
[6] Study of factors limiting ESD diode performance in 90nm CMOS technologies and beyond
Chatty, K
Gauthier, R
Putnam, C
Muhammad, M
Woo, M
Li, J
Halbach, R
Seguin, C
[J]. 2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL, 2005, : 98 - 105
[7] Methods and Challenges to extend existing dry 193nm medium NA lithography beyond 90nm
Schneider, Jens
Greiner, Andreas
Lim, ChinTeong
Temchenko, Vlad
Braun, Felix
Kaiser, Dieter
Hauck, Tarja
Meusel, Ingo
Burmeister, Dietrich
Loehr, Stephan
Volkland, Susanne
Bauch, Astrid
Kirbach, Hendrik
Sarlette, Daniel
Thiede, Katrin
[J]. OPTICAL MICROLITHOGRAPHY XXIII, 2010, 7640
[8] Experimental Study and Analysis of Soft Errors in 90nm Xilinx FPGA and Beyond
Lesea, A.
Castellani-Coulie, K.
[J]. RADECS 2007: PROCEEDINGS OF THE 9TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, 2007, : 641 - +
[9] A "Soft plus plus " eFPGA physical design approach with case studies in 180nm and 90nm
Aken'Ova, Victor
Saleh, Resve
[J]. IEEE COMPUTER SOCIETY ANNUAL SYMPOSIUM ON VLSI, PROCEEDINGS: EMERGING VLSI TECHNOLOGIES AND ARCHITECTURES, 2006, : 103 - +
[10] Statistical analysis of systematic and random variability of flip-flop race immunity in 130nm and 90nm CMOS technologies
Neuberger, Gustavo
Kastensmidt, Fernanda
Reis, Ricardo
Wirth, Gilson
Brederlow, Ralf
Pacha, Christian
[J]. VLSI-SOC 2007: PROCEEDINGS OF THE 2007 IFIP WG 10.5 INTERNATIONAL CONFERENCE ON VERY LARGE SCALE INTEGRATION, 2007, : 78 - +

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