High-Power BCB Encapsulated VCSELs based on InP

被引：0
|
作者：
Gruendl, T. [1 ]
Mueller, M. [1 ]
Geiger, K. [1 ]
Grasse, C. [1 ]
Boehm, G. [1 ]
Meyer, R. [1 ]
Amann, M-C [1 ]
机构：
[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
来源：
2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2011年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The high temperature behavior of short cavity InP based VCSEL devices with 5.5 mu m apertures is presented. They show record optical output powers and SMSRs beyond 50 dB over the whole temperature range.
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页数：2
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