InGaN/GaN double heterostructure laser with cleaved facets

Laser action is demonstrated in InGaN/GaN double heterostructures with cleaved facets. Hydride vapor phase epitaxy is used to grow a 10-mu m-thick buffer layer of GaN on (0001) sapphire, and metal-organic vapor phase epitaxy is used to subsequently grow a GaN/In0.09Ga0.91N/GaN double heterostructure. One-mm-long cavities are produced by cleaving the structure along the (<10(1)over bar 0>) plane of the sapphire substrate. A pulsed Nitrogen laser is used for optical excitation. At room temperature, the laser threshold occurs at an incident power density of 1.3 MW/cm(2). Above threshold, the differential quantum efficiency increases by a factor of 34, the emission linewidth decreases to 13.5 meV, and the output becomes highly TE polarized.