InGaN/GaN double heterostructure laser with cleaved facets

被引：0

作者：

Stocker, D ^{[1
]}

Schubert, EF ^{[1
]}

Grieshaber, W ^{[1
]}

Boutros, KS ^{[1
]}

Flynn, JS ^{[1
]}

Vaudo, RP ^{[1
]}

Phanse, VM ^{[1
]}

Redwing, JM ^{[1
]}

机构：

[1] Boston Univ, Dept Phys, Ctr Photon Res, Boston, MA 02215 USA

来源：

IN-PLANE SEMICONDUCTOR LASERS: FROM ULTRAVIOLET TO MID-INFRARED II | 1998年 / 3284卷

关键词：

GaN; InGaN; laser; double heterostructure; cleaving;

D O I：

10.1117/12.304461

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Laser action is demonstrated in InGaN/GaN double heterostructures with cleaved facets. Hydride vapor phase epitaxy is used to grow a 10-mu m-thick buffer layer of GaN on (0001) sapphire, and metal-organic vapor phase epitaxy is used to subsequently grow a GaN/In0.09Ga0.91N/GaN double heterostructure. One-mm-long cavities are produced by cleaving the structure along the (<10(1)over bar 0>) plane of the sapphire substrate. A pulsed Nitrogen laser is used for optical excitation. At room temperature, the laser threshold occurs at an incident power density of 1.3 MW/cm(2). Above threshold, the differential quantum efficiency increases by a factor of 34, the emission linewidth decreases to 13.5 meV, and the output becomes highly TE polarized.

引用

页码：122 / 127

页数：6

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