Retention and imprint properties in single-crystalline PLZT thin film capacitors

Retention and imprint properties were investigated in single-crystalline PLZT thin film capacitors. The capacitors showed an excellent retention property and an asymmetric voltage shift in P-V hysteresis loop depending on poling direction. These imply that the retention is attributed to the bulk thin film quality and the imprint is dominantly affected by the interface effect. In current-voltage measurements for initial and imprinted capacitors, the space charge distribution change was observed at the interface. The charge accumulation is considered to associate with the imprint failure.