Single-crystalline silicon thin-film transistor on glass

被引：0
|
作者：
Shi, XJ [1 ]
Wong, M [1 ]
Henttinen, K [1 ]
Suni, T [1 ]
Suni, I [1 ]
Lau, SS [1 ]
机构：
[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Kowloon, Hong Kong, Peoples R China
来源：
2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS | 2004年
关键词：
glass. ion cutting; layer transfer; single-crystalline silicon; thin-film transistor;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Single-crystalline silicon-on-glass (cSOG) has been obtained using an -ion-cutting" based layer-transfer technique. Compared to previous attempts of realizing cSOG, extended silicon etching is not required and bulk silicon, instead of the relatively more expensive siliconon-insulator donor wafers, can be used. Thin-film transistors based on cSOG have been fabricated and characterized. The stability of cSOG Thin-film transistors with or without laser-induced annealing is reported.
引用
收藏
页码：265 / 268
页数：4
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