Single-crystalline silicon thin-film transistor on glass

被引：0

作者：

Shi, XJ ^{[1
]}

Wong, M ^{[1
]}

Henttinen, K ^{[1
]}

Suni, T ^{[1
]}

Suni, I ^{[1
]}

Lau, SS ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Kowloon, Hong Kong, Peoples R China

来源：

2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS | 2004年

关键词：

glass. ion cutting; layer transfer; single-crystalline silicon; thin-film transistor;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Single-crystalline silicon-on-glass (cSOG) has been obtained using an -ion-cutting" based layer-transfer technique. Compared to previous attempts of realizing cSOG, extended silicon etching is not required and bulk silicon, instead of the relatively more expensive siliconon-insulator donor wafers, can be used. Thin-film transistors based on cSOG have been fabricated and characterized. The stability of cSOG Thin-film transistors with or without laser-induced annealing is reported.

引用

页码：265 / 268

页数：4

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