Simulation of surface and line-edge roughness formation in resists

被引：15
|
作者：
Patsis, GP [1 ]
Gogolides, E [1 ]
机构：
[1] NCSR Demokritos, Inst Microelect, Aghia Paraskevi 15310, Greece
来源：
MICROELECTRONIC ENGINEERING | 2001年 / 57-8卷
关键词：
surface roughness; SR; line-edge-roughness; resists;
D O I：
10.1016/S0167-9317(01)00547-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A molecular-type simulation of surface (SR) and line-edge-roughness (LER) is presented and applied to a negative-tone Chemically Amplified Resist (CAR). The simulator can follow the appearance of SR and LER after each process step and predict the roughness dependence on material properties and process conditions. The simulation results are compared with SR experimental data for a negative-tone chemically amplified epoxy resist. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：563 / 569
页数：7
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