A silicon gated field edge cathode

被引：0

作者：

Dyuzhev, NA ^{[1
]}

Beliaev, SN ^{[1
]}

Vlasenko, VA ^{[1
]}

Gogin, AA ^{[1
]}

Gontar, VM ^{[1
]}

Deniskin, VV ^{[1
]}

Mazaev, AA ^{[1
]}

Nevsky, AB ^{[1
]}

Tishin, YI ^{[1
]}

Shokin, AN ^{[1
]}

机构：

[1] LLC Unique ICs, Zelenograd City 124460, Moscow, Russia

来源：

TECHNICAL DIGEST OF THE 16TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE | 2003年

关键词：

D O I：

暂无

中图分类号：

O69 [应用化学];

学科分类号：

081704 ;

摘要：

引用

页码：177 / 178

页数：2

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