A silicon gated field edge cathode

被引：0
|
作者：
Dyuzhev, NA [1 ]
Beliaev, SN [1 ]
Vlasenko, VA [1 ]
Gogin, AA [1 ]
Gontar, VM [1 ]
Deniskin, VV [1 ]
Mazaev, AA [1 ]
Nevsky, AB [1 ]
Tishin, YI [1 ]
Shokin, AN [1 ]
机构：
[1] LLC Unique ICs, Zelenograd City 124460, Moscow, Russia
来源：
TECHNICAL DIGEST OF THE 16TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE | 2003年
关键词：
D O I：
暂无
中图分类号：
O69 [应用化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：177 / 178
页数：2
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