A Low-Power High-Speed Sensing Scheme for Single-Ended SRAM

In this paper, a reference-voltage self-selected pseudo-differential sensing scheme suitable for single-ended SRAM is proposed. The proposed sensing scheme can select different reference voltage according to the offset direction. With the employment of the new sensing scheme, the swing of the read bit-line in the read operation is reduced by 74.6% and 45.5% compared to the conventional domino and the pseudo-differential sense amplifier sensing scheme, respectively. Therefore, the delay and power consumption of the read operation are significantly improved. Simulation results based on a standard 55nm CMOS show that compared with the conventional domino and pseudo-differential sensing schemes, the sensing delay is improved by 66.4% and 47.7%, and the power consumption is improved by 31.4% and 22.5%, respectively. Although the area of the sensing scheme is increased by 50.8% compared with the pseudo-differential sense amplifier sensing scheme, it has little effect on the entire SRAM area.