MOCVD growth of transparent conducting Cd2SnO4 thin films

被引：20

作者：

Metz, AW ^{[1
]}

Lane, MA

Kannewurf, CR

Poeppelmeier, KR

Marks, TJ

机构：

[1] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA

[2] Northwestern Univ, Dept Elect & Comp Engn, Evanston, IL 60208 USA

来源：

CHEMICAL VAPOR DEPOSITION | 2004年 / 10卷 / 06期

关键词：

D O I：

10.1002/cvde.200304177

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Communication: The first preparation of transparent conducting Cd2SnO4 thin films by a simple MOCVD process is described. As-deposited films using Cd(hfa)(2)(TMEDA) (Figure), at 365 degreesC are found to be highly crystalline with a relatively wide range of grain size of 100-300 nm. XRD indicates a cubic spinel CdSnO4 crystal structure and the possible presence of a small amount of CdO. The films exhibit conductivities of 2170 S/cm and a bandgap of 3.3 eV, rivaling those of commercial tin-doped indium oxide.

引用

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页码：297 / +

页数：5

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