Organic thin-film field-effect transistors with MoO3/Al electrode and OTS/SiO2 bilayer gate insulator

被引：37
|
作者：
Bai, Y. [1 ,2 ,3 ]
Liu, X. [1 ,2 ,3 ]
Chen, L. [1 ,2 ,3 ]
Khizar-ul-Haq [1 ,2 ,3 ]
Khan, M. A. [1 ,2 ,3 ]
Zhu, W. Q. [1 ,2 ,3 ]
Jiang, X. Y. [1 ,2 ,3 ]
Zhang, Z. L. [1 ,2 ,3 ]
机构：
[1] Shanghai Univ, Dept Mat Sci, Shanghai 201800, Peoples R China
[2] Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Appl, Shanghai 200072, Peoples R China
[3] Shanghai Univ, Dept Mat Sci, Shanghai 201800, Peoples R China
来源：
MICROELECTRONICS JOURNAL | 2007年 / 38卷 / 12期
关键词：
organic thin-film transistor; modified electrode; bilayer insulator;
D O I：
10.1016/j.mejo.2007.09.010
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An organic thin-film transistor (OTFTs) having OTS/SiO2 bilayer gate insulator and MoO3/Al electrode configuration between gate insulator and source-drain (S-D) electrodes has been investigated. Thermally grown SiO2 layer is used as the OTFT gate dielectric and copper phthalocyanine (CuPc) for an active layer. We have found that using silane coupling agents, octadecyltrichlorosilane (OTS) on SiO2, surface energy Of SiO2 gate dielectric is reduced; consequently, the device performance has been improved significantly. This OTS/SiO2 bilayer gate insulator configuration increases the field-effect mobility, reduces the threshold voltage and improves the on/off ratios simultaneously. The device with MoO3/Al electrode has similar source-drain current (I-DS) compared to the device with An electrode at same gate voltage. Our results indicate that using double-layer of insulator and modified electrode is an effective way to improve OTFT performance. (C) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1185 / 1190
页数：6
相关论文
共 50 条
  • [31] Phthalocyanine zinc thin film field-effect transistor with SiO2/Si3N4/SiO2 multilayer insulator
    Liu, X.
    Liu, H.
    Xue, Yu-Zhi
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2014, 8 (7-8): : 720 - 723
  • [32] Effect of the work function of gate electrode on hysteresis characteristics of organic thin-film transistors with Ta2O5/polymer as gate insulator
    Li, Chunhong
    Pan, Feng
    Wang, Xiujin
    Wang, Lijuan
    Wang, He
    Wang, Haibo
    Yan, Donghang
    ORGANIC ELECTRONICS, 2009, 10 (05) : 948 - 953
  • [33] Remarkable performance improvement of copper phthalocyanine organic field-effect transistors with polymeric bilayer gate insulator
    Liu, Xueqiang
    Kang, Haobo
    Zhang, Xin
    Gu, Chaoyun
    Qi, Yuefeng
    CHEMICAL PHYSICS LETTERS, 2019, 734
  • [34] Characteristics of SiO2 film grown by atomic layer deposition as the gate insulator of low-temperature polysilicon thin-film transistors
    Lee, Won-Jun
    Chun, Min-Ho
    Cheong, Kwang-Su
    Park, Kwang-Chol
    Park, Chong Ook
    Cao, Guozhong
    Rha, Sa-Kyun
    ADVANCES IN NANOMATERIALS AND PROCESSING, PTS 1 AND 2, 2007, 124-126 : 247 - +
  • [35] The influence of SiO2 and Al2O3 gate insulator to the performance of In-Ga-Zn-O thin film transistors
    Ding, Xingwei
    Shi, Weimin
    Zhang, Jianhua
    Zhang, Hao
    Li, Jun
    Jiang, Xueyin
    Zhang, Zhilin
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2014, 8 (7-8): : 659 - 662
  • [36] FERROELECTRIC FIELD-EFFECT DEVICE USING THIN-FILM SNO2 AND GATE INSULATOR BATIO3
    ITO, K
    TSUCHIYA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (07) : 1091 - 1092
  • [37] Thin-film passivation by atomic layer deposition for organic field-effect transistors
    Jeon, Hayoung
    Shin, Kwonwoo
    Yang, Chanwoo
    Park, Chan Eon
    Park, Sang-Hee Ko
    APPLIED PHYSICS LETTERS, 2008, 93 (16)
  • [38] Low driving voltages and memory effect in organic thin-film transistors with a ferroelectric gate insulator
    Velu, G
    Legrand, C
    Tharaud, O
    Chapoton, A
    Remiens, D
    Horowitz, G
    APPLIED PHYSICS LETTERS, 2001, 79 (05) : 659 - 661
  • [39] Temperature Dependence of Field-Effect Mobility in Organic Thin-Film Transistors: Similarity to Inorganic Transistors
    Okada, Jun
    Nagase, Takashi
    Kobayashi, Takashi
    Naito, Hiroyoshi
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 16 (04) : 3219 - 3222
  • [40] Dual-gate pentacene organic field-effect transistors based on a nanoassembled SiO2 nanoparticle thin film as the gate dielectric layer -: art. no. 064102
    Cui, TH
    Liang, GR
    APPLIED PHYSICS LETTERS, 2005, 86 (06) : 1 - 3
12345