Organic thin-film field-effect transistors with MoO3/Al electrode and OTS/SiO2 bilayer gate insulator

被引：37
|
作者：
Bai, Y. [1 ,2 ,3 ]
Liu, X. [1 ,2 ,3 ]
Chen, L. [1 ,2 ,3 ]
Khizar-ul-Haq [1 ,2 ,3 ]
Khan, M. A. [1 ,2 ,3 ]
Zhu, W. Q. [1 ,2 ,3 ]
Jiang, X. Y. [1 ,2 ,3 ]
Zhang, Z. L. [1 ,2 ,3 ]
机构：
[1] Shanghai Univ, Dept Mat Sci, Shanghai 201800, Peoples R China
[2] Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Appl, Shanghai 200072, Peoples R China
[3] Shanghai Univ, Dept Mat Sci, Shanghai 201800, Peoples R China
来源：
MICROELECTRONICS JOURNAL | 2007年 / 38卷 / 12期
关键词：
organic thin-film transistor; modified electrode; bilayer insulator;
D O I：
10.1016/j.mejo.2007.09.010
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An organic thin-film transistor (OTFTs) having OTS/SiO2 bilayer gate insulator and MoO3/Al electrode configuration between gate insulator and source-drain (S-D) electrodes has been investigated. Thermally grown SiO2 layer is used as the OTFT gate dielectric and copper phthalocyanine (CuPc) for an active layer. We have found that using silane coupling agents, octadecyltrichlorosilane (OTS) on SiO2, surface energy Of SiO2 gate dielectric is reduced; consequently, the device performance has been improved significantly. This OTS/SiO2 bilayer gate insulator configuration increases the field-effect mobility, reduces the threshold voltage and improves the on/off ratios simultaneously. The device with MoO3/Al electrode has similar source-drain current (I-DS) compared to the device with An electrode at same gate voltage. Our results indicate that using double-layer of insulator and modified electrode is an effective way to improve OTFT performance. (C) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1185 / 1190
页数：6
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