Fabrication and Study of Large-Area QHE Devices Based on Epitaxial Graphene

被引：19
|
作者：
Novikov, Sergei [1 ]
Lebedeva, Natalia [1 ]
Pierz, Klaus [2 ]
Satrapinski, Alexandre [3 ]
机构：
[1] Aalto Univ, Dept Micro & Nanosci, Espoo 02150, Finland
[2] Phys Tech Bundesanstalt, D-38116 Braunschweig, Germany
[3] Ctr Metrol & Accreditat, Espoo 02150, Finland
来源：
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT | 2015年 / 64卷 / 06期
关键词：
Contact resistance; epitaxial graphene; graphene fabrication; precision measurement; quantum Hall effect (QHE);
D O I：
10.1109/TIM.2014.2385131
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of the QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and fabricated using a double metallization process. The tested devices had an initial carrier concentration of (0.6-10) . 10(11) cm(-2) and showed half-integer QHE at a relatively low (3 T) magnetic field. The application of the photochemical gating method and annealing of the sample provides a convenient way for tuning the carrier density to the optimum value. Precision measurements of the quantum Hall resistance in graphene and GaAs devices at moderate magnetic field strengths (<= 7 T) showed a relative agreement within 6 . 10(-9).
引用
收藏
页码：1533 / 1538
页数：6
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