Epitaxial technology for MEMS applications

This manuscript describes that an epitaxial growth of Si wires on Si (111) and Al2O3 films on Si (111) or (100) is demonstrated to make sensors, and to propose an epitaxial MEMS technology. Especially, a large number of Si wires on Si (111) can be fabricated with a high aspect ratio more than a few hundreds. A diameter of the wire can be controlled from sub-micron to a few hundred microns. The Si wire position on the chip is also controlled and the chip with IC circuits can work after the Si wire growth. This means the epitaxial growth could be used as a post CMOS process.