Trench Insulated Gate Bipolar Transistors submitted to High Temperature Bias stress

被引：1

作者：

Maïga, CO ^{[1
]}

Toutah, H ^{[1
]}

Tala-Ighil, B ^{[1
]}

Boudart, B ^{[1
]}

机构：

[1] LUSAC, F-50130 Octeville, France

来源：

MICROELECTRONICS RELIABILITY | 2005年 / 45卷 / 9-11期

关键词：

D O I：

10.1016/j.microrel.2005.07.098

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work we analyse the behavior of the Non Punch Through Trench Insulated Gate Bipolar Transistors submitted to High Temperature Gate Bias (HTGB) and High Temperature Reverse Bias (HTRB) stresses. The electric stress has been accomplished during 1200 hours at 140 degrees C with 0.8V(CEmax) Collector - Emitter bias (HTRB) and with V-GE = -20V or +20V Gate Bias (HTGB), The results show the evolution of the static parameters as threshold voltage and on-state voltage drop and of switching parameters. The aim is to constitute a database as complete as possible for the analysis and diagnosis of failure causes related to the switching devices in power conversion systems. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：1728 / 1731

页数：4

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