Trench Insulated Gate Bipolar Transistors submitted to High Temperature Bias stress

被引：1

作者：

Maïga, CO ^{[1
]}

Toutah, H ^{[1
]}

Tala-Ighil, B ^{[1
]}

Boudart, B ^{[1
]}

机构：

[1] LUSAC, F-50130 Octeville, France

来源：

MICROELECTRONICS RELIABILITY | 2005年 / 45卷 / 9-11期

关键词：

D O I：

10.1016/j.microrel.2005.07.098

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work we analyse the behavior of the Non Punch Through Trench Insulated Gate Bipolar Transistors submitted to High Temperature Gate Bias (HTGB) and High Temperature Reverse Bias (HTRB) stresses. The electric stress has been accomplished during 1200 hours at 140 degrees C with 0.8V(CEmax) Collector - Emitter bias (HTRB) and with V-GE = -20V or +20V Gate Bias (HTGB), The results show the evolution of the static parameters as threshold voltage and on-state voltage drop and of switching parameters. The aim is to constitute a database as complete as possible for the analysis and diagnosis of failure causes related to the switching devices in power conversion systems. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：1728 / 1731

页数：4

共 50 条

[31] Investigation of analytical model of turn-off loss for 4H-SiC high-voltage trench insulated gate bipolar transistors
Liu, Yan-juan
Wang, Ying
Fang, Jun-peng
JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (12)
[32] Reduction of the Gate Leakage Current in Binary-trench-insulated Gate AlGaN/GaN High-electron-mobility Transistors
Kim, Su Jin
Kim, Doug Ho
Kim, Jae Moo
Jung, Kang Min
Kim, Tae Geun
Choi, Hong Goo
Hahn, Cheol-Koo
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2009, 55 (01) : 356 - 361
[33] An Insulated-Gate Bipolar Transistor With a Collector Trench Electron Extraction Channel
Jiang, Mengxuan
Yin, Xin
Shuai, Zhikang
Wang, Jun
Shen, Z. John
IEEE ELECTRON DEVICE LETTERS, 2015, 36 (09) : 935 - 937
[34] Point Injection in Trench Insulated Gate Bipolar Transistor for ultra low losses
Antoniou, M.
Udrea, F.
Bauer, F.
Mihaila, A.
Nistor, I.
2012 24TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2012, : 21 - 24
[35] An on-state analytical model for the trench insulated gate bipolar transistor (TIGBT)
Udrea, F
Amaratunga, GAJ
SOLID-STATE ELECTRONICS, 1997, 41 (08) : 1111 - 1118
[36] Silicon direct bonding approach to high voltage power device (insulated gate bipolar transistors)
Cha, GH
Kim, Y
Jang, H
Kang, H
Song, CS
ADVANCES IN MICROELECTRONIC DEVICE TECHNOLOGY, 2001, 4600 : 88 - 95
[37] Paralleling insulated-gate bipolar transistors in the H-bridge structure to reduce current stress
Majid Memarian Sorkhabi
Karen Wendt
Daniel Rogers
Timothy Denison
SN Applied Sciences, 2021, 3
[38] Mahalanobis Distance Approach for Insulated Gate Bipolar Transistors (IGBT) Diagnostics
Patil, Nishad
Das, Diganta
Pecht, Michael
NEW WORLD SITUATION: NEW DIRECTIONS IN CONCURRENT ENGINEERING, 2010, : 583 - 591
[39] Electrical Performances of Insulated Gated Bipolar Transistor (IGBT) in Terms of Bipolar Transistor Driven by Insulated Gate Bias
Yang, Hsin-Chia
Lin, Yi-Syuan
Chang, Rung Jin
Yang, Han-Ya
Chi, Sung-Ching
2020 6TH INTERNATIONAL CONFERENCE ON APPLIED SYSTEM INNOVATION (ICASI), 2020, : 50 - 52
[40] Paralleling insulated-gate bipolar transistors in the H-bridge structure to reduce current stress
Memarian Sorkhabi, Majid
Wendt, Karen
Rogers, Daniel
Denison, Timothy
SN APPLIED SCIENCES, 2021, 3 (04):

← 1 2 3 4 5 →