Spectroscopic evidence of in-gap states at the SrTiO3/LaAlO3 ultrathin interfaces

被引：44

作者：

Drera, G. ^{[1
]}

Banfi, F. ^{[1
]}

Canova, F. Federici ^{[1
]}

Borghetti, P. ^{[1
]}

Sangaletti, L. ^{[1
]}

Bondino, F. ^{[2
]}

Magnano, E. ^{[2
]}

Huijben, J. ^{[3
,4
]}

Huijben, M. ^{[3
,4
]}

Rijnders, G. ^{[3
,4
]}

Blank, D. H. A. ^{[3
,4
]}

Hilgenkamp, H. ^{[3
,4
]}

Brinkman, A. ^{[3
,4
]}

机构：

[1] Univ Cattolica, Dipartimento Matemat & Fis, I-25121 Brescia, Italy

[2] IOM CNR, Lab TASC, I-34149 Basovizza, Italy

[3] Univ Twente, Fac Sci & Technol, NL-7500 AE Enschede, Netherlands

[4] Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 05期

关键词：

HETEROSTRUCTURES;

D O I：

10.1063/1.3549177

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Experimental evidence of differences in the electronic properties of an insulating and a conducting SrTiO3/LaAlO3 interface is provided by soft x-ray spectroscopies. While core level photoemission measurements show that only at the conducting interface Ti ions with 3+ ionization state are present, by using resonant photoemission and x-ray absorption spectroscopies, it is shown that in both samples in-gap states with a Ti 3d character are present, but their density is higher at the conducting interface. (C) 2011 American Institute of Physics. [doi:10.1063/1.3549177]

引用

页数：3

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