A 12-GHz fully integrated cascode CMOS LC VCO with Q-enhancement circuit

被引：45
|
作者：
Park, Bonghyuk [1 ,2 ]
Lee, Seungsik [2 ]
Choi, Sangsung [2 ]
Hong, Songcheol [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Dept Elect & Comp Sci, Taejon 305701, South Korea
[2] Elect & Telecommun Res Inst, Wireless Home Network Res Team, Taejon 305700, South Korea
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2008年 / 18卷 / 02期
关键词：
cascode; complementary metal oxide semiconductor (CMOS); negative conductance; phase noise; Q-enhancement; voltage controlled oscillator (VCO);
D O I：
10.1109/LMWC.2007.915136
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A fully integrated complementary metal oxide semiconductor (CMOS) cascode LC voltage controlled oscillator (VCO) with Q-enhancement technique has been designed for high frequency and low phase noise. The symmetrical cascode architecture is implemented with negative conductance circuit for improving phase noise performance in 0.18 mu m CMOS technology. The measured phase noise is -110.8 dBc/Hz at the offset frequency of 1 MHz. The tuning range of 630 MHz is achieved with the control voltage from 0.6 to 1.4 V. The VCO draws 4.5 mA in a differential core circuit from 1.8 V supply.
引用
收藏
页码：133 / 135
页数：3
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