A 12-GHz fully integrated cascode CMOS LC VCO with Q-enhancement circuit

被引：45

作者：

Park, Bonghyuk ^{[1
,2
]}

Lee, Seungsik ^{[2
]}

Choi, Sangsung ^{[2
]}

Hong, Songcheol ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect & Comp Sci, Taejon 305701, South Korea

[2] Elect & Telecommun Res Inst, Wireless Home Network Res Team, Taejon 305700, South Korea

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2008年 / 18卷 / 02期

关键词：

cascode; complementary metal oxide semiconductor (CMOS); negative conductance; phase noise; Q-enhancement; voltage controlled oscillator (VCO);

D O I：

10.1109/LMWC.2007.915136

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fully integrated complementary metal oxide semiconductor (CMOS) cascode LC voltage controlled oscillator (VCO) with Q-enhancement technique has been designed for high frequency and low phase noise. The symmetrical cascode architecture is implemented with negative conductance circuit for improving phase noise performance in 0.18 mu m CMOS technology. The measured phase noise is -110.8 dBc/Hz at the offset frequency of 1 MHz. The tuning range of 630 MHz is achieved with the control voltage from 0.6 to 1.4 V. The VCO draws 4.5 mA in a differential core circuit from 1.8 V supply.

引用

页码：133 / 135

页数：3

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