Influence of sulfurization pressure on structural and electrical property of Cu2ZnSnS4 thin film and solar cell

被引：7

作者：

Li, Jinze ^{[1
]}

Shen, Honglie ^{[1
,2
]}

Li, Yufang ^{[1
,2
]}

Yao, Hanyu ^{[1
]}

Wang, Wei ^{[1
]}

Wu, Wenwen ^{[1
]}

Ren, Zheng ^{[1
]}

机构：

[1] Nanjing Univ Aeronaut & Astronaut, Coll Mat Sci & Technol, 29 Yudao St, Nanjing 210016, Peoples R China

[2] Changzhou Univ, Jiangsu Collaborat Innovat Ctr Photovolta Sci & E, Changzhou 213164, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2016年 / 27卷 / 08期

关键词：

METALLIC PRECURSORS; NANOPARTICLES;

D O I：

10.1007/s10854-016-4890-x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Effects of sulfurization pressure on structural and electrical property of Cu2ZnSnS4 (CZTS) thin film prepared by sulfurizing co-sputtered Cu-Zn-Sn-S precursor were investigated. X-ray diffraction patterns and Raman spectra confirmed the shrinkage of lattice and compressive stress forming in low pressure sulfurized CZTS thin film, which prevented the overgrowing of grains along vertical direction. In addition, low pressure sulfurization could reduce the number of small grains in film. Thus CZTS solar cell based on low pressure sulfurized CZTS thin film obtained a 124 % enhancement in conversion efficiency. Temperature-dependent conductivity measurement revealed the mechanism of the improvement in CZTS solar cell by low pressure sulfurization, which was due to the promotion of V-Cu forming and the removal of localized states in defect band.

引用

页码：8688 / 8692

页数：5

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