Three-Dimensional Non-Volatile Magnetic Universal Logic Gates

被引:0
|
作者
Amos, N. [2 ]
Stefanescu, E. [3 ]
Butler, J. [2 ]
Lee, B. [2 ]
Tian, Y. [2 ]
Ikkawi, R. [2 ,3 ]
Chomko, R. [2 ]
Safonov, V. L. [2 ,4 ]
Haddon, R. [2 ]
Litvinov, D. [5 ]
Khizroev, S. [1 ,2 ,3 ]
机构
[1] Florida Int Univ, Miami, FL 33174 USA
[2] Univ Calif Riverside, Ctr Nanoscale Sci & Engn, Riverside, CA 92521 USA
[3] Univ Birmingham, Birmingham B15 2TT, W Midlands, England
[4] Western Digital Corp, San Jose, CA 95138 USA
[5] Univ Houston, Ctr Nanomagnet Syst, Houston, TX 77204 USA
基金
美国国家科学基金会;
关键词
Nanomagnetic Logic; 3-D Magnetic Computer; 3-D Electronics; Universal Gates; Nanoelectronics; Single-Chip Computing;
D O I
10.1166/jno.2011.1144
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present an experimental study on ultra-dense 3-D non-volatile magnetic universal logic gates with reconfigurable AND and OR functions. A four-layer magnetic structure with a net thickness of less than 30 nm is employed as a study illustration of a highly scalable magnetic logic device. In the device, the magnetic state of the top output "soft" layer depends on the magnetic states of the remaining three "hard" layers used as two input and one reset layers, respectively. To build vertically oriented magnetic devices with a gradient of the coercivity and the magnetization across the thickness, we use Co/Pd multilayers sputter-deposited via a combinatorial synthesis. Through a focused magneto-optical Kerr effect (F-MOKE) study, we relate input and output states in the 4-layer logic device to shoulders on major and minor M-H hysteresis loops. We use magnetic force microscopy (MFM) to identify magnetic logic operations.
引用
收藏
页码:132 / 137
页数:6
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