A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology

被引：2

作者：

Cacciato, A. ^{[1
]}

Breuil, L. ^{[1
]}

Dekker, H. ^{[1
]}

Zahid, M. ^{[1
]}

Kar, G. S. ^{[1
]}

Everaert, J. L. ^{[1
]}

Schoofs, G. ^{[1
]}

Shi, X. ^{[1
]}

Van den Bosch, G. ^{[1
]}

Jurczak, M. ^{[1
]}

Debusschere, I. ^{[1
]}

Van Houdt, J. ^{[1
]}

Cockburn, Andrew ^{[2
]}

Date, Lucien ^{[2
]}

Xa, Li-Qun ^{[3
]}

Le, Maggie ^{[3
]}

Lee, Won ^{[3
]}

机构：

[1] IMEC, B-3000 Louvain, Belgium

[2] Appl Mat Belgium, B-3001 Louvain, Belgium

[3] Appl Mat Inc, Santa Clara, CA 95054 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2011年 / 14卷 / 07期

关键词：

D O I：

10.1149/1.3579240

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In this paper we compare a novel plasma-enhanced atomic layer deposition (PEALD) oxide with more conventional HTO and ISSG oxides. We show that, remarkably for a deposited oxide, the oxide quality is, both in terms of field-to-breakdown and SILC generation, comparable to that of ISSG thermal oxide. Finally, we show that data retention of SONOS stack with PEALD is significantly better than for stacks with ISSG tunnel oxide. PEALD oxide is, therefore, a promising choice for 3D non-volatile flash technologies. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3579240] All rights reserved.

引用

页码：H271 / H273

页数：3

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