Continuous-wave operation of a 1.3-μm GaAsSb-GaAs quantum-well vertical-cavity surface-emitting laser at room temperature

被引：43
|
作者：
Quochi, F [1 ]
Kilper, DC [1 ]
Cunningham, JE [1 ]
Dinu, M [1 ]
Shah, J [1 ]
机构：
[1] Bell Labs, Lucent Technol, Holmdel, NJ 07733 USA
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2001年 / 13卷 / 09期
关键词：
optical communication; quantum-well lasers; semiconductor epitaxial layers; surface-emitting lasers;
D O I：
10.1109/68.942647
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, we report continuous-wave room temperature operation of a GaAsSb-GaAs quantum-well vertical-cavity surface-emitting laser near 1.3 mum. The device is pumped with 674 nm light and provides 1-QmW total optical output at 1280 run with 40% differential quantum efficiency. We describe the spatial, angular, and spectral properties of the laser. This device features the record of long wavelength with high output power in the GaAsSb-GaAs system.
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页码：921 / 923
页数：3
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