Semi-insulating silicon substrates for silicon based RF integrated circuits

被引：4
|
作者：
Wang, R [1 ]
Campbell, SA [1 ]
Tan, R [1 ]
Meyer, J [1 ]
Cai, Y [1 ]
机构：
[1] Univ Minnesota, ECe Dept, Minneapolis, MN 55455 USA
来源：
1998 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS: DIGEST OF PAPERS | 1998年
关键词：
D O I：
10.1109/SMIC.1998.750213
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Semi-insulating silicon wafers have been prepared by gold doping and the use of a buried silicon nitride diffusion barrier. Electrical performance is comparable to semi-insulating GaAs.
引用
收藏
页码：164 / 168
页数：5
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