Semi-insulating silicon substrates for silicon based RF integrated circuits

被引：4

作者：

Wang, R ^{[1
]}

Campbell, SA ^{[1
]}

Tan, R ^{[1
]}

Meyer, J ^{[1
]}

Cai, Y ^{[1
]}

机构：

[1] Univ Minnesota, ECe Dept, Minneapolis, MN 55455 USA

来源：

1998 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS: DIGEST OF PAPERS | 1998年

关键词：

D O I：

10.1109/SMIC.1998.750213

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Semi-insulating silicon wafers have been prepared by gold doping and the use of a buried silicon nitride diffusion barrier. Electrical performance is comparable to semi-insulating GaAs.

引用

页码：164 / 168

页数：5

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