Progress in High Power Diode Laser Pumps for High-Energy Class Mid Infra-Red Lasers

被引：0
|
作者：
Arslan, S. [1 ]
Maassdorf, A. [1 ]
Martin, D. [1 ]
Kreutzmann, S. [1 ]
Crump, P. A. [1 ]
机构：
[1] Ferdinand Braun Inst gGmbH, Leibniz Inst Hochstfrequenztech, Gustav Kirchhoff Str 4, D-12489 Berlin, Germany
来源：
2021 ANNUAL CONFERENCE OF THE IEEE PHOTONICS SOCIETY (IPC) | 2021年
关键词：
D O I：
10.1109/IPC48725.2021.9593003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Epitaxial design development in 780 nm diode lasers for lower loss and lower bias-driven leakage enables increases in power (to 210 W) and conversion efficiency (to 57% at 60 W) in high repetition-rate (10 ms, 10 Hz), wide-aperture (1200 mu m) devices ready for use in pumping high-energy-class thulium-doped solid-state lasers.
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页数：2
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