Progress in High Power Diode Laser Pumps for High-Energy Class Mid Infra-Red Lasers

被引：0

作者：

Arslan, S. ^{[1
]}

Maassdorf, A. ^{[1
]}

Martin, D. ^{[1
]}

Kreutzmann, S. ^{[1
]}

Crump, P. A. ^{[1
]}

机构：

[1] Ferdinand Braun Inst gGmbH, Leibniz Inst Hochstfrequenztech, Gustav Kirchhoff Str 4, D-12489 Berlin, Germany

来源：

2021 ANNUAL CONFERENCE OF THE IEEE PHOTONICS SOCIETY (IPC) | 2021年

关键词：

D O I：

10.1109/IPC48725.2021.9593003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Epitaxial design development in 780 nm diode lasers for lower loss and lower bias-driven leakage enables increases in power (to 210 W) and conversion efficiency (to 57% at 60 W) in high repetition-rate (10 ms, 10 Hz), wide-aperture (1200 mu m) devices ready for use in pumping high-energy-class thulium-doped solid-state lasers.

引用

页数：2

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