Random Dopant Fluctuation in Gate-All-Around Nanowire FET

被引：0
|
作者：
Tan, Cher Ming [1 ]
Chen, Xiangchen [2 ]
机构：
[1] Chang Gung Univ, Taoyuan, Taiwan
[2] Nanyang Technol Univ, Sch EEE, Singapore, Singapore
来源：
2014 IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) | 2014年
关键词：
junctionless; inversion mode; threshold voltage; device applications;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The random dopant fluctuation (RDF) induced threshold voltage variation are compared between a junction less and an inversion mode gate-all-around (GAA) silicon nanowire FET. We found that the RDF induced variation of junction less GAA nanowire FET is larger and more sensitive than that of the inversion mode GAA nanowire FET, and it is contributed by the higher doping concentration in the nanowire of the junctionless device. The impact of RDF on the I-d-V-g of the FETs found in this work also suggest appropriate operating conditions for the FETs in order to reduce the impact ofRDF.
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页数：4
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