Reliability Investigation of 4H-SiC MOSFET Based on TCAD Simulation

被引：0

作者：

Luo, Houcai ^{[1
,2
]}

Huang, Yiping ^{[1
]}

Zheng, Kai ^{[2
]}

Tan, Chunjian ^{[1
,2
]}

Wang, Liming ^{[1
,2
]}

Wang, Shaogang ^{[1
,2
]}

Ye, Huaiyu ^{[2
]}

Chen, Xianping ^{[1
,2
]}

机构：

[1] Guilin Univ Elect Technol, Sch Mech & Elect Engn, Guilin 541004, Peoples R China

[2] Chongqing Univ, Coll Optoelect Engn, Chongqing 400044, Peoples R China

来源：

2018 19TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT) | 2018年

基金：

中国国家自然科学基金;

关键词：

reliability; 4H-SiC MOSFET; TCAD; hotspot; HIGH-TEMPERATURE; SIC MOSFET; 1200-V;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The reliability of 4H-SiC MOSFET was investigated based on TCAD simulation. The results shown that the leakage current was increased with the increment of ambient temperature while the breakdown voltage almost kept constant. Localized electric field focalizing indicated that a local breakdown region was located between P-base and JFET region. Significantly, the SiC MOSFET would be damaged from metal electrodes melting and gate oxide breaking down under short-circuit condition owing to localized hotspot.

引用

页码：956 / 960

页数：5

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