High dose MeV oxygen ion implantation into SiC

被引：19
|
作者：
Wesch, W
Heft, A
Hobert, H
Peiter, G
Wendler, E
Bachmann, T
机构：
[1] Univ Jena, Inst Festkorperphys, D-07743 Jena, Germany
[2] Friedrich Schiller Univ, Inst Phys Chem, D-07743 Jena, Germany
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1998年 / 141卷 / 1-4期
关键词：
wave guides; SiC; ion implantation;
D O I：
10.1016/S0168-583X(98)00184-0
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
By high-dose MeV oxygen implantation into 6H-SiC bulk crystals at temperatures between 650 degrees C and 700 degrees C buried SiC-SiOx layers were produced. In the infrared and visible region these layers exhibit a refractive index which is significantly reduced with respect to the virgin SIC making them useable as cladding layers for SIC waveguides. For the first time waveguiding at lambda = 633 nm was demonstrated after annealing such an ion implanted SiC-SiO, layer system. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：160 / 163
页数：4
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