Advances in carbon nanotube n-type doping: Methods, analysis and applications

被引：103

作者：

Brownlie, Liam ^{[1
]}

Shapter, Joseph ^{[1
]}

机构：

[1] Flinders Univ South Australia, Ctr Nanoscale Sci & Technol, Sturt Rd, Bedford Pk, SA 5042, Australia

来源：

CARBON | 2018年 / 126卷

关键词：

OXYGEN REDUCTION REACTION; THIN-FILM TRANSISTORS; ORGANIC SOLAR-CELLS; P-TYPE; ELECTROCATALYTIC ACTIVITY; CATALYST SUPPORT; ELECTRONIC-PROPERTIES; NITROGEN; COMPOSITES; NANOPARTICLES;

D O I：

10.1016/j.carbon.2017.09.107

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Great advances in semiconductor technologies continue to be made with the demand for cheap, nontoxic, easily processed and environmentally friendly technologies on the rise. Single-walled carbon nanotubes (SWCNTs) are viewed as a promising candidate that satisfies these criteria however proper doping of the SWCNTs to provide n-type behaviour has been a persistent issue. In recent years, great advances have been made in providing air stable and efficient n-type doping of SWCNTs. This review presents the most recent and promising methods of n-type doping SWCNTs highlighted for their simplicity and quality of electrical properties. The analysis and major applications of these semiconductors with a focus on thermoelectric devices and transistors are discussed. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：257 / 270

页数：14

共 50 条

[21] N-type implantation doping of GaN
Nakano, Y
Kachi, T
Jimbo, T
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2003, 6 (5-6) : 515 - 517
[22] Route to n-type doping in SnS
Xiao, Zewen
Ran, Fan-Yong
Hosono, Hideo
Kamiya, Toshio
APPLIED PHYSICS LETTERS, 2015, 106 (15)
[23] n-type doping of oxides by hydrogen
Kiliç, Ç
Zunger, A
APPLIED PHYSICS LETTERS, 2002, 81 (01) : 73 - 75
[24] N-type Doping Strategies for InGaAs
Aldridge, Henry, Jr.
Lind, Aaron G.
Bomberger, Cory C.
Puzyrev, Yevgeniy
Zide, Joshua M. O.
Pantelides, Sokrates T.
Law, Mark E.
Jones, Kevin S.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017, 62 : 171 - 179
[25] Substitutional n-type doping of diamond
Larsson, K
COMPUTATIONAL MATERIALS SCIENCE, 2003, 27 (1-2) : 23 - 29
[26] p-and n-type Doping of Zinc Oxide through Electrochemical Methods
Sahal, M.
Mollar, M.
Mari, B.
PROCEEDINGS OF 2016 INTERNATIONAL RENEWABLE & SUSTAINABLE ENERGY CONFERENCE (IRSEC' 16), 2016, : 11 - 15
[27] Unusual Electrical Conductivity Enhancement in Stable n-Type Carbon Nanotube Networks
Chang, Sooyon
Biswas, Prithwish
Qin, Zhao
Tian, Zhiting
SMALL METHODS, 2024,
[28] Air-Stable Technique for Fabricating n-Type Carbon Nanotube FETs
Wei, Hai
Chen, Hong-Yu
Liyanage, Luckshitha
Wong, H. -S. Philip
Mitra, Subhasish
2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2011,
[29] Polymer functionalized n-type single wall carbon nanotube photovoltaic devices
Li, Zhongrui
Saini, Viney
Dervishi, Enkeleda
Kunets, Vasyl P.
Zhang, Jianhui
Xu, Yang
Biris, Alexandru R.
Salamo, Gregory J.
Biris, Alexandru S.
APPLIED PHYSICS LETTERS, 2010, 96 (03)
[30] Making Contacts to n-Type Organic Transistors Using Carbon Nanotube Arrays
Cicoira, Fabio
Aguirre, Carla M.
Martel, Richard
ACS NANO, 2011, 5 (01) : 283 - 290

← 1 2 3 4 5 →