Structural, electrical and optical properties of MeV As+ ion implanted InP

被引：0
|
作者：
Carmody, C [1 ]
Tan, HH [1 ]
Jagadish, C [1 ]
Zou, J [1 ]
Dao, L [1 ]
Gal, M [1 ]
机构：
[1] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys Sci & Engn, Canberra, ACT 0200, Australia
来源：
COMMAD 2002 PROCEEDINGS | 2002年
关键词：
D O I：
10.1109/COMMAD.2002.1237296
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The structural, optical and electrical properties of MeV ion implanted InP were studied as a function of annealing temperature. At high annealing temperatures, the implanted material exhibited picosecond optical responses and sheet resitivities of the order of tens of ohms/square. DCXRD and TEM measurements revealed distinct layers of damage resulting from the implantation.
引用
收藏
页码：487 / 490
页数：4
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