Scanning tunneling spectroscopy characterization of As+ implanted InP (100) single crystals

被引：0
|
作者：
Ichizli, V [1 ]
Riemenschneider, R [1 ]
Hartnagel, HL [1 ]
机构：
[1] Tech Univ Darmstadt, Inst Hochfrequenztech, D-64283 Darmstadt, Germany
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 05期
关键词：
D O I：
10.1116/1.1288202
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Current-voltage measurements performed with a scanning tunneling microscope were carried out on (100)-oriented InP single crystals implanted with As+ ions. I-V investigations were made for InP crystals implanted with two different implantation doses, namely, 6.2X10(14) and 6.2X10(15) cm(-2), and annealed at 400, 500, 600, and 750 degreesC. First of all, the applicability of the scanning tunneling spectroscopy on an implanted semiconductor with high surface damage is presented. Following this, the damage and recovery processes are analyzed and described on the basis of current-voltage curve variation with implantation dose and annealing temperature change. Some important conclusions are made for behavior and interaction of the host phosphorus and implanted arsenic ions in InP. (C) 2000 American Vacuum Society. [S0734-211X(00)00905-7].
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收藏
页码：2590 / 2592
页数：3
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