Peculiarities of the current-voltage characteristics of oxidized porous silicon

被引：4
|
作者：
Ablova, MS [1 ]
Zamoryanskaya, MV [1 ]
Sokolov, VI [1 ]
Khasanov, RI [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2003年 / 29卷 / 06期
关键词：
Silicon; Porous Silicon; Quantum Size; Nanocomposite Material; Quantum Size Effect;
D O I：
10.1134/1.1589557
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Oxidized porous silicon is a nanocomposite material. The current-voltage characteristics of MOS structures based on this material exhibit some special features (large plateau, oscillations), which can be considered as manifestations of quantum size effects. (C) 2003 MAIK "Nauka/Interperiodica".
引用
收藏
页码：459 / 460
页数：2
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