Suppression of boron-oxygen defects in p-type Czochralski silicon by germanium doping (vol 97, 051903, 2010)

被引：0
|
作者：
Yu, Xuegong [1 ]
Wang, Peng [1 ]
Chen, Peng [1 ]
Li, Xiaoqiang [1 ]
Yanga, Deren [1 ]
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 13期
关键词：
D O I：
10.1063/1.3483301
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页数：1
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