Annealing studies on LEC grown Si undoped GaAs single crystals

被引：0

作者：

Durai, L ^{[1
]}

Radhakrishnan, JK ^{[1
]}

Thirumavalavan, M ^{[1
]}

Inderpal ^{[1
]}

Singh, H ^{[1
]}

Singh, D ^{[1
]}

Chander, J ^{[1
]}

Kaur, J ^{[1
]}

Joshi, SC ^{[1
]}

Narula, RC ^{[1
]}

Bagai, RK ^{[1
]}

机构：

[1] Solidstate Phys Lab, Delhi 54, India

来源：

PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2 | 1998年 / 3316卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Annealing of undoped SI GaAs crystal samples was carried out at 950 degrees C for five hours in vacuum/arsenic overpressure followed by slow cooling / quenching. Resistivity distribution across the wafer was studied and found that the wafers taken from the crystal annealed under arsenic overpressure,is better than the wafers taken from ingot annealed under vacuum.

引用

页码：304 / 307

页数：4

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